IXGN60N60C2D1 Description
+150 2500 3000 1.5/13 1.3/11.5 30 °C °C °C V~ V~ Nm/lb.in. g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE VCE = VCES VGE = 0V TJ = 125°C VCE = 0V, VGE = ±20V IC = 50A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. 3.0 5.0 V 650 μA 5 mA ±100 nA 2.1 2.5 V 1.8 V SOT-227B, miniBLOC E153432 Ec G Ec C G = Gate, C = Collector, E = Emitter c Either...
IXGN60N60C2D1 Key Features
- High Power Dissipation
- Drive Simplicity z Low Collector-to-Case Capacitance
- Easy to Drive and to Protect