IXSK35N120AU1 Description
High Voltage IGBT with Diode bi Pack Short Circuit SOA Capability IXSK35N120AU1 VCES IC25 VCE(sat) = 1200 V = 70 A = 4V .. Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; +150 V V V V A A A A ms W W °C °C °C °C Nm/lb.in.
IXSK35N120AU1 Key Features
- International standard package JEDEC TO-264 AA
- High frequency IGBT and anti-parallel FRED in one package
- 2nd generation HDMOSTM process
- Low VCE(sat)
- for minimum on-state conduction losses
- MOS Gate turn-on
- drive simplicity
- Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM