Datasheet4U Logo Datasheet4U.com

IXSK35N120BD1 Datasheet High Voltage IGBT With Diode

Manufacturer: IXYS (now Littelfuse)

Overview: High Voltage IGBT with Diode Short Circuit SOA Capability Preliminary data sheet Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg TL Weight 1.6 mm (0.063 in) from case for 10 s TO-264 PLUS247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 5 W Clamped inductive load VGE = 15 V, VCE = 720 V, TJ = 125°C RG = 5 W, non repetitive TC = 25°C IGBT Diode IXSK 35N120BD1 IXSX 35N120BD1 VCES = 1200 V IC25 = 70 A VCE(SAT) = 3.6 V Maximum Ratings 1200 1200 ± 20 ± 30 70 35 140 ICM = 90 @ 0.8 VCES 10 300 190 -55 ... +150 150 -55 ...

Key Features

  • • Hole-less TO-247 package for clip mounting • High frequency IGBT and anti-parallel FRED in one package • Low VCE(sat) - for minimum on-state conduction losses • MOS Gate turn-on - drive simplicity • Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM.

More Datasheets from IXYS (now Littelfuse)

Part Number Description
IXSK35N120AU1 High Voltage IGBT
IXSK30N60BD1 High Speed IGBT
IXSK30N60CD1 Short Circuit SOA Capability
IXSK40N60CD1 IGBT
IXSK50N60AU1 IGBT
IXSK50N60BU1 IGBT
IXSK80N60B High Current IGBT Short Circuit SOA Capability
IXSA10N60B2D1 High Speed IGBT
IXSA15N120B High Voltage IGBT
IXSA16N60 Short Circuit SOA Capability

IXSK35N120BD1 Distributor