IXSK50N60AU1 Overview
IGBT with Diode bi Pack Short Circuit SOA Capability IXSK 50N60AU1 VCES IC25 VCE(sat) = 600 V = 75 A = 2.7 V .. Symbol V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; +150 V V V V A A A A µs W °C °C °C TO-264 AA V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight G C E C = Collector, TAB = Collector G = Gate, E = Emitter,.
IXSK50N60AU1 Key Features
- for minimum on-state conduction losses MOS Gate turn-on
- drive simplicity Fast Recovery Epitaxial Diode (FRED)
- soft recovery with low IRM