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IGBT with Diode
Short Circuit SOA Capability
IXSK 50N60BU1 IXSX 50N60BU1
VCES IC25 VCE(sat)
= 600 V = 75 A = 2.5 V
PLUS247 (IXSX)
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C, limited by leads TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 22 W, non repetitive TC = 25°C
Maximum Ratings
C (TAB)
600 600 ±20 ±30 75 50 200 ICM = 100 @ 0.8 VCES 10 300 -55 ... +150 150 -55 ... +150
V V V V A A A A ms W °C °C °C Nm/lb.in. g °C
G
C
E
TO-264 AA (IXSK)
G
C
E C = Collector, TAB = Collector
G = Gate, E = Emitter,
Mounting torque
0.
IXSK50N60BU1 Datasheet
