IXSK80N60B Overview
.. High Current IGBT Short Circuit SOA Capability IXSK 80N60B IXSX 80N60B VCES IC25 VCE(sat) = 600 V = 160 A = 2.5 V Symbol VCES VCGR VCES VGEM IC25 IC90 IL(RMS) ICM SSOA (RBSOA) tsc SCSOA PC TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ.
IXSK80N60B Key Features
- for minimum on-state conduction losses ! MOS Gate turn-on
- drive simplicity
IXSK80N60B Applications
- VCES, higher TJ or increased RG Inductive load, TJ =125°C IC = IC90, VGE = 15 V VCE = 0.8 VCES, RG = Roff = 2.7 Ω Remarks: Switching times may increase for VCE