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IGBT with Diode
IXSN 35N100U1
VCES IC25 VCE(sat)
= 1000 V = 38 A = 3.5 V
High Short Circuit SOA Capability
3 2
4 www.DataSheet4U.com
1
Symbol V CES
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; RGE = 1 MΩ Continuous Transient T C = 25°C T C = 90°C T C = 25°C, 1 ms V GE = 15 V, TVJ = 125°C, RG = 22 Ω Clamped inductive load, L = 30 µ H V GE = 15 V, VCE = 0.6 • V CES, TJ = 125°C RG = 22 Ω, non repetitive T C = 25°C 50/60 Hz IISOL ≤ 1 mA t = 1 min t=1s
Maximum Ratings 1000 1000 ±20 ±30 38 25 50 ICM = 50 @ 0.8 VCES 10 205 2500 3000 -40 ... +150 150 -40 ...
IXSN35N100U1 Datasheet
