IXSN35N100U1 Description
IGBT with Diode IXSN 35N100U1 VCES IC25 VCE(sat) = 1000 V = 38 A = 3.5 V High Short Circuit SOA Capability 3 2 4 .. 1 Symbol V CES Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150° C; 30 g Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) min.
IXSN35N100U1 Key Features
- for high short circuit SOA Low VCE(sat)
- for minimum on-state conduction losses MOS Gate turn-on
- drive simplicity Fast Recovery Epitaxial Diode (FRED)
- short trr and IRM Low collector-to-case capacitance (< 50 pF)
- reducesd RFI Low package inductance (< 10 nH)
- easy to drive and to protect
- VCES V GE = 0 V V CE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V
IXSN35N100U1 Applications
- VCES, Ron = 6.8 Ω, Roff = 22 Ω Remarks: Switching times may increase for VCE (Clamp) > 0.6