IXSN55N120A Description
High Voltage IGBT IXSN 55N120A VCES = 1200 V IC25 = 110 A 4V VCE(sat) = 3 Short Circuit SOA Capability 2 Preliminary Data .. 4 Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC VISOL TJ TJM Tstg Md Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C;.
IXSN55N120A Key Features
- high power dissipation Isolation voltage 3000 V~ UL registered E 153432 Low VCE(sat)
- for minimum on-state conduction losses Low collector-to-case capacitance (<100 pF)
- reduces RFI Low package inductance (< 10 nH)
- easy to drive and to protect