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IXSN55N120AU1 Datasheet High Voltage IGBT

Manufacturer: IXYS (now Littelfuse)

Overview: High Voltage IGBT with Diode Short Circuit SOA Capability IXSN 55N120AU1 VCES = 1200 V IC25 = 110 A VCE(sat) = 4V 3 2 Preliminary data 4 www.DataSheet4U.com Symbol 1 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 0.6 • VCES, TJ = 125°C RG = 22 W, non repetitive TC = 25°C 50/60 Hz IISOL £ 1 mA IGBT Diode t = 1 min t=1s Maximum Ratings 1200 1200 ±20 ±30 110 55 160 ICM = 110 @ 0.

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Key Features

  • 4 3 500 175 2500 3000 -55 +150 150 -55 +150 W W V~ V~ °C °C °C Nm/lb. in. Nm/lb. in. Mounting torque Terminal connection torque (M4) 1.5/13 1.5/13.
  • International standard package miniBLOC (ISOTOP) compatible.
  • Aluminium-nitride isolation - high power dissipation.
  • Isolation voltage 3000 V~.
  • Low VCE(sat) - for minimum on-state conduction losses.
  • Fast Recovery Epitaxial Diode - short trr and IRM.
  • Low collector-to-case capacitance (< 60 pF) -.

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