IXSN55N120AU1 Description
High Voltage IGBT with Diode Short Circuit SOA Capability IXSN 55N120AU1 VCES = 1200 V IC25 = 110 A VCE(sat) = 4V 3 2 Preliminary data 4 .. Symbol 1 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C;.
IXSN55N120AU1 Key Features
- International standard package miniBLOC (ISOTOP) patible
- Aluminium-nitride isolation
- high power dissipation
- Isolation voltage 3000 V~
- Low VCE(sat)
- for minimum on-state conduction losses
- Fast Recovery Epitaxial Diode
- short trr and IRM
- Low collector-to-case capacitance (< 60 pF)
- reduces RFI