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IXTP180N055T - (IXTP180N055T / IXTA180N055T / IXTQ180N055T) Trench Gate Power MOSFET

Key Features

  • z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 1 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 55 2.0 4.0 ±200 1 250 3.3 4.0 V Advantages z V nA µA µA mΩ z z Easy to mount Space savings High power density VGS = 10 V, ID =.

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Advance Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode IXTQ 180N055T IXTA 180N055T IXTP 180N055T VDSS ID25 RDS(on) = 55 V = 180 A = 4.0 mΩ TO-3P (IXTQ) Symbol VDSS VDGR VGSM ID25 IDRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Maximum Ratings 55 55 ± 20 V V V TO-220 (IXTP) 180 75 600 75 1.0 3 360 -55 ... +175 175 -55 ... +150 A A A A G (TAB) G D S (TAB) TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C J V/ns W °C °C °C °C °C G = Gate S = Source D S TO-263 (IXTA) G S (TAB) D = Drain TAB = Drain 1.6 mm (0.062 in.