Click to expand full text
Advance Technical Information
Trench Gate Power MOSFET
N-Channel Enhancement Mode
IXTQ 180N055T IXTA 180N055T IXTP 180N055T
VDSS ID25
RDS(on)
= 55 V = 180 A = 4.0 mΩ
TO-3P (IXTQ)
Symbol VDSS VDGR VGSM ID25 IDRMS IDM IAR EAS dv/dt PD TJ TJM Tstg TL
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ
Maximum Ratings 55 55 ± 20 V V V TO-220 (IXTP) 180 75 600 75 1.0 3 360 -55 ... +175 175 -55 ... +150 A A A A
G (TAB) G D S (TAB)
TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 10 Ω TC = 25°C
J V/ns W °C °C °C °C °C
G = Gate S = Source
D S
TO-263 (IXTA)
G
S (TAB) D = Drain TAB = Drain
1.6 mm (0.062 in.
IXTP180N055T Datasheet
