Overview: PolarHTTM Power MOSFET IXTA 36N30P IXTP 36N30P IXTQ 36N30P N-Channel Enhancement Mode Avalanche Rated V= DSS
ID25 = ≤ RDS(on) 300 V 36 A
110 mΩ Symbol Test Conditions TO-263 (IXTA) Maximum Ratings VDSS V
DGR
VGS VGSM
ID25 IDM I
AR
EAR EAS
dv/dt
PD TJ TJM Tstg
T L
TSOLD Md Weight TJ = 25° C to 150° C T J = 25° C to 150° C; R GS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 10 Ω
TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-3P / TO-220)
TO-3P TO-220 TO-263 300 V 300 V ±30 V ±40 V 36 A 90 A 36 A 30 mJ 1.0 J 10 V/ns 300 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.5 g 4 g 3 g Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 300 V VGS(th) VDS = VGS, ID = 250µA 3.0 5.5 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 125° C 1 µA 200 µA RDS(on) VGS = 10 V, ID = 0.
