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IXTP3N110 - (IXTx3N1x0) High Voltage Power MOSFETs

Download the IXTP3N110 datasheet PDF. This datasheet also covers the IXTA3N110 variant, as both devices belong to the same (ixtx3n1x0) high voltage power mosfets family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l l l G DS TO-263 (IXTA) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque (TO-220) TO-220 TO-263 300 1.13/10 Nm/lb. in. 4 2 g g l International standard packages Low RDS (on) Rated for unclamped Inductive load Switching (UIS) Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3N120 3N110 1200 1100 2.5 4.5 ± 100 TJ = 25.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTA3N110_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTP3N100D2 MOSFET IXYS
IXTP3N100P MOSFET IXYS
IXTP3N60P N-Channel MOSFET INCHANGE
IXTP300N04T2 Power MOSFET IXYS
IXTP300N04T2 N-Channel MOSFET INCHANGE

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTP3N120 Power MOSFET
IXTP3N50D2 N-Channel MOSFET
IXTP3N50P Power MOSFET
IXTP3N60P N-Channel MOSFET
IXTP36N30P Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com High Voltage Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt Preliminary Data Sheet VDSS ID25 3A 3A RDS(on) 4.5 Ω 4.