Datasheet4U Logo Datasheet4U.com

IXTP3N50P - Power MOSFET

This page provides the datasheet information for the IXTP3N50P, a member of the IXTA3N50P Power MOSFET family.

Datasheet Summary

Features

  • International Standard Packages.
  • Low QG.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Datasheet preview – IXTP3N50P

Datasheet Details

Part number IXTP3N50P
Manufacturer IXYS Corporation
File Size 312.83 KB
Description Power MOSFET
Datasheet download datasheet IXTP3N50P Datasheet
Additional preview pages of the IXTP3N50P datasheet.
Other Datasheets by IXYS Corporation

Full PDF Text Transcription

Click to expand full text
PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTY3N50P IXTA3N50P IXTP3N50P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 500 V 500 V 30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 3 8 3 180 10 70 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C Maximum Lead Temperature for Soldering 300 °C 1.6 mm (0.062in.) from Case for 10s 260 °C Mounting Force (TO-263) Mounting Torque (TO-220) 10..65 / 2.2..14.6 1.13 / 10 N/lb Nm/lb.in TO-252 TO-263 TO-220 0.35 g 2.50 g 3.
Published: |