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IXTP42N25P - Power MOSFET

Download the IXTP42N25P datasheet PDF. This datasheet also covers the IXTQ42N25P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99157E(12/05) Symbol g fs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS IXTA 42N25P IXTP 42N25P IXTQ 42N25P Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. V = 10 V; I = 0.5 I , pulse test 12 20 S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTQ42N25P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXTP42N25P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXTP42N25P. For precise diagrams, and layout, please refer to the original PDF.

PolarHTTM Power MOSFET IXTA 42N25P IXTP 42N25P IXTQ 42N25P VDSS = ID25 = ≤ RDS(on) 250 42 84 V A mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol VDSS V...

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N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR E AS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C T J = 25° C to 150° C; R GS = 1 MΩ Continuous Transient TC = 25° C TC = 25° C, pulse width limited by TJM T C = 25° C TC = 25° C T C = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 10 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque (TO-3P / TO-220) TO-3P TO-220 TO-263 Maximum Ratings 250 V 250 V ±20 V ±30 V 42 A 110 A 42 A 30 mJ 1.0 J 10 V/ns 300 W -55 ... +150 °C 150 °C -55 ...

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