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PolarHTTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTQ 96N15P IXTT 96N15P
V DSS
ID25
RDS(on)
= 150 V = 96 A ≤ 24 mΩ
Symbol
VDSS VDGR VGSS VGSM
I
D25
ID(RMS) IDM IAR EAR EAS
dv/dt
PD TJ TJM Tstg
TL T
SOLD
Md Weight
Test Conditions
TJ = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ
Continuous Transient
T C
= 25° C
External lead current limit
TC = 25° C, pulse width limited by TJM
TC = 25° C
TC = 25° C TC = 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS TJ ≤150° C, RG = 4 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-3P)
TO-3P TO-268
Maximum Ratings
150
V
150
V
±20
V
±30
V
TO-3P (IXTQ)
96
A
G
75
A
DS
250
A
60
A
40
mJ TO-268 (IXTT)
1.0
J
(TAB)
10
V/ns
480
W
-55 ... +175
°C
175
°C
-55 ..
IXTT96N15P Datasheet
