Datasheet4U Logo Datasheet4U.com

IXTT100N25P - N-Channel MOSFET

Download the IXTT100N25P datasheet PDF. This datasheet also covers the IXTQ100N25P variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Advantages l Easy to mount l Space savings l High power density © 2006 IXYS All rights reserved DS99118E(12/05) Symbol gfs C iss C oss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS R thCS IXTK 100N25P IXTQ 100N25P IXTT 100N25P Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. TO-3P (IXTQ) Outline VDS= 10.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTQ100N25P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTT10N100D2 Depletion Mode MOSFET IXYS
IXTT10P60 Power MOSFET IXYS
IXTT110N10L2 Power MOSFET IXYS
IXTT120N15P Power MOSFET IXYS
IXTT12N140 Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTT10P50 P-Channel MOSFET
IXTT110N10P N-Channel MOSFET
IXTT11P50 P-Channel MOSFET
IXTT140N10P Power MOSFET
IXTT1N100 High-Voltage MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarHTTM Power MOSFET IXTK 100N25P IXTQ 100N25P IXTT 100N25P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 250 V 100 A 27 mΩ Symbol Test Conditions Maximum Ratings TO-264 (IXTK) V DSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR E AR EAS dv/dt PD TJ T JM Tstg TL TSOLD M d Weight T J = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C I S ≤ I, DM di/dt ≤ 100 A/µs, V DD ≤ V, DSS T J ≤150° C, R G = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-3P TO-264 TO-268 250 V 250 V ±20 V ±30 V 100 A 75 A 250 A 60 A 60 mJ 2.0 J 10 V/ns 600 W -55 ...