Datasheet4U Logo Datasheet4U.com

IXTT1N100 - High-Voltage MOSFET

Download the IXTT1N100 datasheet PDF. This datasheet also covers the IXTH1N100 variant, as both devices belong to the same high-voltage mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Ÿ International standard packages Ÿ High voltage, Low RDS (on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTH1N100_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXTT1N250HV High Voltage Power MOSFET IXYS
IXTT1N300P3HV High Voltage Power MOSFET IXYS
IXTT1N450HV High Voltage Power MOSFET IXYS
IXTT10N100D2 Depletion Mode MOSFET IXYS
IXTT10P60 Power MOSFET IXYS

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTT100N25P N-Channel MOSFET
IXTT10P50 P-Channel MOSFET
IXTT110N10P N-Channel MOSFET
IXTT11P50 P-Channel MOSFET
IXTT140N10P Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTH 1N100 IXTT 1N100 V DSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol Test Conditions V DSS VDGR VGS VGSM ID25 I DM T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C T C = 25°C, pulse width limited by T JM IAR EAR EAS dv/dt PD T J TJM T stg Md Weight TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 18 Ω TC = 25°C Mounting torque (TO-247) TO-268 TO-247 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Ratings 1000 V 1000 V ±20 V ±30 V 1.5 A 6 A 1.5 A 6 mJ 200 mJ 3 V/ns 60 W -55 ... +150 °C 150 °C -55 ... +150 °C 1.13/10 Nm/lb.in.