IXTT1N100 Description
+150 °C 1.13/10 Nm/lb.in. 4 g 6 g 300 °C Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
- Part: IXTT1N100
- Manufacturer: IXYS
- Size: 71.28 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXTT100N25P | N-Channel MOSFET |
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| IXTT11P50 | P-Channel MOSFET |
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