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IXTT140N10P - Power MOSFET

Download the IXTT140N10P datasheet PDF. This datasheet also covers the IXTQ140N10P variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l l 1.13/10 Nm/lb. in. 5.5 5.0 g g l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 250µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175° C Characteristic Values Min. Typ. Max. 100 3.0 5.0 ±100 25 500 11 9 V V nA µA µA mΩ mΩ Advantages l l l Easy to mount Space savings Hi.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXTQ140N10P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXTT100N25P N-Channel MOSFET
IXTT10P50 P-Channel MOSFET
IXTT110N10P N-Channel MOSFET
IXTT11P50 P-Channel MOSFET
IXTT1N100 High-Voltage MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarHTTM Power MOSFET www.datasheet4u.com IXTQ 140N10P IXTT 140N10P VDSS ID25 RDS(on) = = ≤ 100 V 140 A 11 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C Maximum Ratings 100 100 ±20 ±30 140 75 300 60 80 2.5 10 600 -55 ... +175 175 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C °C G = Gate S = Source G S D = Drain TAB = Drain D (TAB) TO-3P (IXTQ) G D S (TAB) TO-268 (IXTT) 1.6 mm (0.062 in.