IXYB82N120C3H1 - High-Speed IGBT

Datasheet Summary

Features

Optimized for Low Switching Losses.
Square RBSOA.
Anti-Parallel Ultra Fast Diode.
Positive Thermal Coefficient of Vce(sat).
High Current Handling Capability.
International Standard Package Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYS Corporation

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Datasheet Details

Part number	IXYB82N120C3H1
Manufacturer	IXYS Corporation
File Size	259.83 KB
Description	High-Speed IGBT
Datasheet	IXYB82N120C3H1 Datasheet
Additional preview pages of the IXYB82N120C3H1 datasheet.

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Full PDF Text Transcription

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1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYB82N120C3H1 Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C (Chip Capability) Lead Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 2 Clamped Inductive Load TC = 25°C 164 A 160 A 82 A 42 A 320 A ICM = 164 A  @VCE VCES 1040 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force 30..120 / 6.7..27 N/lb.

Published: Jun 1, 2014 |