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IXYB82N120C3H1 Datasheet High-speed IGBT

Manufacturer: IXYS (now Littelfuse)

Overview: 1200V XPTTM IGBT GenX3TM w/ Diode High-Speed IGBT for 20-50 kHz Switching IXYB82N120C3H1 Symbol VCES VCGR VGES VGEM IC25 ILRMS IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C (Chip Capability) Lead Current Limit TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 2 Clamped Inductive Load TC = 25°C 164 A 160 A 82 A 42 A 320 A ICM = 164 A  @VCE VCES 1040 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s 300 °C 260 °C Mounting Force 30..120 / 6.7..27 N/lb. 10 g Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) BVCES IC = 250A, VGE = 0V VGE(th) IC = 250A, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 125C IGES VCE = 0V, VGE = 20V VCE(sat) IC = 82A, VGE = 15V, Note 1 TJ = 125C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 50 A 3 mA 100 nA 2.75 3.50 3.20 V V VCES = 1200V IC110 = 82A V CE(sat)  3.

Key Features

  • Optimized for Low Switching Losses.
  • Square RBSOA.
  • Anti-Parallel Ultra Fast Diode.
  • Positive Thermal Coefficient of Vce(sat).
  • High Current Handling Capability.
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

More Datasheets from IXYS (now Littelfuse)

Part Number Description
IXYA20N120C3HV 1200V XPT GenX3 IGBTs
IXYH20N120C3 1200V XPT GenX3 IGBTs
IXYH50N120C3 High-Speed IGBT
IXYH50N120C3D1 High-Speed IGBT
IXYH82N120C3 1200V XPT IGBT
IXYP20N120C3 1200V XPT GenX3 IGBTs

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