IXYH50N120C3 - High-Speed IGBT

Datasheet Summary

Features

z Optimized for Low Switching Losses z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement.

IXYS Corporation

📥 Download Datasheet

Datasheet Details

Part number	IXYH50N120C3
Manufacturer	IXYS Corporation
File Size	210.69 KB
Description	High-Speed IGBT
Datasheet	IXYH50N120C3 Datasheet
Additional preview pages of the IXYH50N120C3 datasheet.

📁 Similar Datasheet

IXYH50N65C3 - IGBT (IXYS)
IXYH50N65C3D1 - IGBT (IXYS)
IXYH50N65C3H1 - IGBT (IXYS)
IXYH55N120A4 - Ultra Low-Vsat PT IGBT (IXYS)
IXYH100N65B3 - IGBT (IXYS)
IXYH100N65C3 - IGBT (IXYS)
IXYH10N170C - High Voltage IGBT (IXYS)
IXYH10N170CV1 - High Voltage IGBT (IXYS)
IXYH120N65A5 - IGBT (IXYS)
IXYH120N65B3 - IGBT (IXYS)

Other Datasheets by IXYS Corporation

IXYH50N120C3D1 - High-Speed IGBT
IXYH20N120C3 - 1200V XPT GenX3 IGBTs
IXYH82N120C3 - 1200V XPT IGBT
IXYA20N120C3HV - 1200V XPT GenX3 IGBTs
IXYB82N120C3H1 - High-Speed IGBT
IXYP20N120C3 - 1200V XPT GenX3 IGBTs

Full PDF Text Transcription

Click to expand full text

1200V XPTTM IGBT GenX3TM IXYH50N120C3 High-Speed IGBT for 20-50 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5Ω Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 1200 V 1200 V ±20 V ±30 V 100 A 50 A 240 A ICM = 100 A ≤ @VCE VCES 750 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in.

Published: Jan 20, 2012 |