Overview: 1200V XPTTM IGBT GenX3TM IXYH50N120C3 High-Speed IGBT for 20-50 kHz Switching Symbol
VCES VCGR
VGES VGEM
IC25 IC110 ICM
SSOA (RBSOA)
PC
TJ TJM Tstg
TL TSOLD
Md
Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5Ω Clamped Inductive Load TC = 25°C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 1200 V 1200 V ±20 V ±30 V 100 A 50 A 240 A ICM = 100 A ≤ @VCE VCES 750 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6 g Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVCES IC = 250μA, VGE = 0V VGE(th) IC = 250μA, VCE = VGE ICES VCE = VCES, VGE = 0V TJ = 150°C IGES VCE = 0V, VGE = ±20V VCE(sat) IC = 50A, VGE = 15V, Note 1 TJ = 150°C Characteristic Values Min. Typ. Max. 1200 V 3.0 5.0 V 25 μA 250 μA ±100 nA 3.1 3.5 V 4.2 V VCES = IC110 =
V ≤ CE(sat) tfi(typ) = 1200V 50A
3.
