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IXYH50N120C3 - High-Speed IGBT

Key Features

  • z Optimized for Low Switching Losses z Square RBSOA z Positive Thermal Coefficient of Vce(sat) z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1200V XPTTM IGBT GenX3TM IXYH50N120C3 High-Speed IGBT for 20-50 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1MΩ Continuous Transient TC = 25°C (Chip Capability) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5Ω Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 1200 V 1200 V ±20 V ±30 V 100 A 50 A 240 A ICM = 100 A ≤ @VCE VCES 750 W -55 ... +175 °C 175 °C -55 ... +175 °C 300 °C 260 °C 1.13/10 Nm/lb.in.