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IXYH50N120C3D1 - High-Speed IGBT

Key Features

  • Optimized for Low Switching Losses.
  • Square RBSOA.
  • Positive Thermal Coefficient of Vce(sat).
  • Anti-Parallel Ultra Fast Diode.
  • High Current Handling Capability.
  • International Standard Package Advantages.
  • High Power Density.
  • Low Gate Drive Requirement.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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1200V XPTTM IGBT GenX3TM w/ Diode IXYH50N120C3D1 High-Speed IGBT for 20-50 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC100 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 100°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 1200 V 1200 V ±20 V ±30 V 90 A 50 A 25 A 210 A ICM = 100 A  @VCE VCES 625 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in.