IXYH50N120C3D1 - High-Speed IGBT

Datasheet Summary

Features

Optimized for Low Switching Losses.
Square RBSOA.
Positive Thermal Coefficient of Vce(sat).
Anti-Parallel Ultra Fast Diode.
High Current Handling Capability.
International Standard Package Advantages.
High Power Density.
Low Gate Drive Requirement.

IXYS Corporation

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Datasheet Details

Part number	IXYH50N120C3D1
Manufacturer	IXYS Corporation
File Size	185.02 KB
Description	High-Speed IGBT
Datasheet	IXYH50N120C3D1 Datasheet
Additional preview pages of the IXYH50N120C3D1 datasheet.

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Full PDF Text Transcription

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1200V XPTTM IGBT GenX3TM w/ Diode IXYH50N120C3D1 High-Speed IGBT for 20-50 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC100 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M Continuous Transient TC = 25°C (Chip Capability) TC = 100°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load TC = 25°C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque Maximum Ratings 1200 V 1200 V ±20 V ±30 V 90 A 50 A 25 A 210 A ICM = 100 A  @VCE VCES 625 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in.

Published: Oct 23, 2012 |