L558 Datasheet

IXYS

L558

Key Features

NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching
FRED diodes - fast reverse recovery - low forward voltage
Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate

L5586 — Hamamatsu Corporation — Subminiature LED
L55NH3LL — STMicroelectronics — N-channel Power MOSFET
C23-L55 — Moog — Permanent Magnet DC Motor
HFJ11-2450E-L55RL — HALO — 1x1 Tab-Down 10/100BASE-TX RJ45
K4S281632D-L55 — Samsung Semiconductor — 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
K4S643232H-UC-L55 — Samsung Semiconductor — 2M x 32 SDRAM
K4S643232H-TC-L55 — Samsung Semiconductor — 64Mb H-die (x32) SDRAM
HFJT1-1GP-L55RL — HALO — 1x1 Tab-Up Gigabit PoE and PoE+ Long Body RJ45
HFJT1-1GHP-L55RL — HALO — 1x1 Tab-Up Gigabit PoE and PoE+ Long Body RJ45