VMM90-09F
Key Features
- HiPerFET TM technology - low RDSon - unclamped inductive switching (UIS) capability - dv/dt ruggedness - fast intrinsic reverse diode - low gate charge
- thermistor for internal temperature measurement
- package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - Kelvin source terminals for easy drive - isolated DCB ceramic base plate
