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VMM90-09F - Dual Power HiPerFET Module

Key Features

  • HiPerFET TM technology.
  • low RDSon.
  • unclamped inductive switching (UIS) capability.
  • dv/dt ruggedness.
  • fast intrinsic reverse diode.
  • low gate charge.
  • thermistor for internal temperature measurement.
  • package.
  • low inductive current path.
  • screw connection to high current main terminals.
  • use of non interchangeable connectors for auxiliary terminals possible.
  • Kelvin source terminals for easy dri.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
VMM15-045 Dual Power MOSFET Modules
VMM1500-0075P Dual Power MOSFET Module
VMM300-03F Dual Power HiPerFET Module
VMM650-01F Dual Power HiPerFET Module
VMM85-02F Dual Power HiPerFET Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VMM 90-09F Dual Power HiPerFETTM Module Phaseleg Configuration VDSS = 900 V ID25 = 85 A RDS(on) = 76 mΩ MOSFET T1 + T2 Symbol VDSS VGS ID25 ID80 IF25 IF80 Conditions TVJ = 25°C to 150°C TC = 25°C TC = 80°C (diode) TC = 25°C (diode) TC = 80°C 3 8 9 1 11 10 2 6 7 NTC Maximum Ratings 900 V ±20 V 85 A 65 A 85 A 65 A Symbol RDSon VGSth I DSS IGSS Qg Qgs Qgd t d(on) tr td(off) tf VF trr RthJC RthJS Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VGS = 10 V; ID = ID80 V DS = 20 V; ID = 30 mA V DS = 0.8 • V; DSS V GS = 0 V; TVJ = 25°C TVJ = 125°C VGS = ±20 V; VDS = 0 V VGS= 10 V; VDS = 450 V; ID = 50 A 3 1.5 960 225 430 76 mΩ 5V 0.4 mA mA 1 µA nC nC nC VGS= 10 V; VDS = 0.