VMM90-09F Description
TVJ = 25°C TVJ = 125°C VGS = ±20 V; D80 R G = 0.47 Ω 150 ns 180 ns 330 ns 140 ns (diode) IF = 90 A; VGS = 0 V (diode) IF = 90.
VMM90-09F Key Features
- HiPerFET TM technology
- low RDSon
- unclamped inductive switching (UIS) capability
- dv/dt ruggedness
- fast intrinsic reverse diode
- low gate charge
- thermistor for internal temperature measurement
- package
- low inductive current path
- screw connection to high current main terminals
VMM90-09F Applications
- converters with high power density and high switching speed for