Overview: Preliminary Data Sheet
MegaMOSTMFET
N-Channel Enhancement Mode VDSS
IXTH 30N45 450 V IXTH 30N50 500 V ID25 RDS(on) 30 A 0.16 Ω 30 A 0.17 Ω TO-247 AD Symbol
VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T
stg
TL Md Weight
Symbol
VDSS
VGS(th)
IGSS IDSS
R DS(on) Test Conditions Maximum Ratings TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous Transient 30N45 30N50 30N45 30N50 450 500 450 500
±20 ±30 TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C 30 120
360
-55 ... +150 150
-55 ... +150 V V V V
V V
A A
W
°C °C °C 1.6 mm (0.063 in) from case for 10 s Mounting torque 300 °C 1.13/10 Nm/lb.in.
6g Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max. VGS = 0 V, ID = 5 mA 30N50 30N45 BV temperature coefficient DSS VDS = VGS, ID = 250µA V temperature coefficient
GS(th) VGS = ±20 VDC, VDS = 0 VDS = 0.8 • VDSS V =0V
GS TJ = 25°C T J = 125°C V = 10 V, I = 0.5 I GS D D25 30N50 30N45 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 500 450
.087
2 -0.25 V V %/k
4V %/k ±100 nA 200 µA 3 mA 0.17 0.16 Ω Ω TO-247 SMD ( ...
