IX2113
Features
- Floating Channel for Bootstrap Operation to +600V with Absolute Maximum Rating of +700V
- Outputs Capable of Sourcing and Sinking 2A
- Gate Drive Supply Range From 10V to 20V
- Enhanced Robustness due to SOI Process
- Tolerant to Negative Voltage Transients: d V/dt Immune
- 3.3V Logic patible
- Undervoltage Lockout for Both High-side and
Low-Side Outputs
- Matched Propagation Delays
IX2113 Functional Block Diagram
Description
The IX2113 is a high voltage integrated circuit that can drive high speed MOSFETs and IGBTs that operate at up to +600V. The IX2113 is configured with independent high-side and low-side referenced output channels, both of which can source and sink 2A. The floating high-side channel can drive an N-channel power MOSFET or IGBT 600V from the mon reference.
Manufactured on IXYS Integrated Circuits Division's proprietary high-voltage BCDMOS on SOI (silicon on insulator) process, the IX2113 is extremely robust, and is virtually immune to negative...
