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IXA20PG1200DHGLB Datasheet Xpt IGBT

Manufacturer: IXYS (now Littelfuse)

Overview: Advanced Technical Information IXA 20PG1200DHGLB XPT IGBT phaseleg ISOPLUS™ Surface Mount Power Device IC25 = 32 A VCES = 1200 V V = CE(sat) typ 1.8 V 7 D3 6 D1 4 S1 5 D4 9 1 D2 3 S2 2 8 IGBTs S1, S2 Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Conditions TVJ = 25°C to 150°C TC = 25°C TC = 80°C VGE = 15 V; RG = 56 W; TVJ = 125°C RBSOA, clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 56 W; TVJ = 125°C none repetitive TC = 25°C Maximum Ratings 1200 V ±20 V 32 A 23 A 45 A VCES 10 µs 130 W Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff E(rec)off Cies QGon RthJC RthJH Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 15 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C IC = 0.6 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V ; VGE = ± 20 V Inductive load; TVJ = 125°C VCE = 600 V; IC = 15 A VGE = ±15 V; RG = 56 W 1.8 2.1 V 2.1 V 5.4 6.5 V 125 µA 250 µA 500 nA 70 ns 40 ns 250 ns 100 ns 1.55 mJ 1.7 mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 15 A with heatsink pound (IXYS test setup) tbd pF 48 nC 1.0 K/W 1.35 1.

Key Features

  • XPT IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance in resonant circuits.
  • Sonic™ diode - fast reverse recovery - low operating forward voltage - low leakage current.
  • VCEsat detection diode - integrated into package - very fast diode.
  • Package - isolated back surface - low coupling capacity between pins and heatsink - PCB space saving - enlarged creepage toward.

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