Overview: Advance Technical Information TrenchT2TM HiperFETTM IXFA230N075T2-7
Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS = ID25 =
RDS(on) ≤ 75V 230A 4.2mΩ TO-263 (7-lead) Symbol
VDSS VDGR
VGSM
ID25 ILRMS IDM
IA EAS
PD
TJ TJM Tstg
TL Tsold Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds TO-263 Maximum Ratings 75 75 V V ± 20 V 230 A 160 A 700 A 115 A 850 mJ 480 W -55 ... +175 175
-55 ... +175 °C °C °C 300 °C 260 °C
3g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 1mA IGSS VGS = ± 20V, VDS = 0V IDSS VDS = VDSS, VGS = 0V TJ = 150°C RDS(on) VGS = 10V, ID = 50A, Notes 1& 2 Characteristic Values Min. Typ. Max.
75 V
2.0 4.0 V
±200 nA 25 μA
250 μA 4.
