IXFH110N10P Description
PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; 100 2.5 5.0 ±100 25 250 15 V V nA µA µA.
IXFH110N10P Key Features
- easy to drive and to protect
- Gate 2
- Drain 3
- Source TAB