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IXFH110N10P - PolarHT HiPerFET Power MOSFET

Download the IXFH110N10P datasheet PDF. This datasheet also covers the IXFV110N10PS variant, as both devices belong to the same polarht hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z Fast intrinsic diode z International standard packages z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % Advantages z Easy to mount z Space savings z High power density © 2005 IXYS All rights reserved DS99212A(01/05) IXFH 110N10P IXFV 110N10P IXFV 110N10PS www. DataSheet4U. com Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFV110N10PS_IXYS.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFH100N25P PolarHT HiPerFET Power MOSFET
IXFH100N30X3 N-Channel Power MOSFET
IXFH12N65X2 Power MOSFET
IXFH12N80P Power MOSFET
IXFH130N15X3 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Preliminary Data Sheet Symbol VDSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient IXFH 110N10P IXFV 110N10P IXFV 110N10PS VDSS ID25 RDS(on) = 100 V = 110 A = 15 mΩ www.DataSheet4U.com TO-247 (IXFH) Maximum Ratings 100 100 ± 20 ± 30 110 75 250 60 40 1.0 10 480 -55 ... +175 175 -55 ...