Overview: PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode IXFH12N80P IXFQ12N80P IXFV12N80P IXFV12N80PS VDSS = 800 V
ID25 = 12 A ≤RDS(on) 0.85 Ω
trr ≤ 250 ns TO-247 (IXFH) Symbol Test Conditions Maximum Ratings V DSS
VDGR
V GS
VGSM
ID25 IDM IAR E
AR
EAS T J = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Tranisent TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C T C = 25°C TC = 25°C 800 V
800 V TO-3P (IXFQ)
±30 V
±40 V 12 A 36 A 6A G DS 30 mJ PLUS220 (IXFV) 0.8 J D (TAB) D (TAB) dv/dt
PD T
J
TJM Tstg
TL TSOLD Md FC Weight IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, T J ≤ 150°C, R G = 5 Ω TC = 25°C 10
360 -55 ... +150
150 -55 ... +150 V/ns W GDS D (TAB) °C °C PLUS220 SMD (IXFV...S)
°C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque (TO-247, TO-3P) 300 °C 260 °C
1.13/10 Nm/lb.in. G S Mounting force (PLUS220,PLUS220SMD) 11..65/2.5..15 PLUS220 & PLUS220SMD T0-3P TO-247 4.0 5.5 6.0 N/lb.
