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Advanced Technical Information
HiPerFETTM Power MOSFETs
Q-Class
IXFH 26N55Q IXFT 26N55Q
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
VDSS ID25 RDS(on)
= 550 V = 26 A = 0.23 Ω
trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL Md Weight
Symbol
VDSS VGS(th) IGSS IDSS
RDS(on)
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268
Maximum Ratings
550 V 550 V
±30 V ±40 V
26 A 104 A
26 A
50 mJ 2.0 J
20 V/ns
375 W
-55 to +150 150
-55 to +150
300
°C °C °C
°C
1.13/10 Nm/lb.in.
IXFH26N55Q Datasheet
