Datasheet4U Logo Datasheet4U.com

IXFH26N55Q Datasheet Power MOSFETs

Manufacturer: IXYS (now Littelfuse)

📥 Download Datasheet

Overview

Advanced Technical Information HiPerFETTM Power MOSFETs Q-Class IXFH 26N55Q IXFT 26N55Q N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS ID25 RDS(on) = 550 V = 26 A = 0.23 Ω trr ≤ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 Maximum Ratings 550 V 550 V ±30 V ±40 V 26 A 104 A 26 A 50 mJ 2.0 J 20 V/ns 375 W -55 to +150 150 -55 to +150 300 °C °C °C °C 1.13/10 Nm/lb.in.

6g 4g Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.

typ.

Key Features

  • z IXYS advanced low Qg process z Low gate charge and capacitances - easier to drive - faster switching z International standard packages z Low RDS (on) z Rated for unclamped Inductive load switching (UIS) rated z Molding epoxies meet UL 94 V-0 flammability classification Advantages z Easy to mount z Space savings z High power density © 2003 IXYS All rights reserved DS99001(01/03) Symbol gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK Test Conditions Characteristic Values.

More Datasheets from IXYS (now Littelfuse)

Part Number Description
IXFH26N100X Power MOSFET
IXFH26N60 Power MOSFETs
IXFH26N60Q Power MOSFETs
IXFH20N50P3 Power MOSFET
IXFH20N85X Power MOSFET
IXFH21N50Q Power MOSFET
IXFH220N06T3 Power MOSFET
IXFH22N50P PolarHV HiPerFET Power MOSFET
IXFH22N55 HiPerFET Power MOSFET
IXFH22N60P PolarHV HiPerFET Power MOSFETs