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IXFH36N50P - N-Channel Power MOSFET

Key Features

  • z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG Advantages z High Power Density z Easy to Mount z Space Savings © 2011 IXYS.

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Full PDF Text Transcription for IXFH36N50P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFH36N50P. For precise diagrams, and layout, please refer to the original PDF.

PolarTM HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFV36N50PS IXFV36N50P IXFH36N50P IXFT36N50P VDSS = ID25 = ≤ RDS(on) trr ...

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V36N50PS IXFV36N50P IXFH36N50P IXFT36N50P VDSS = ID25 = ≤ RDS(on) trr ≤ 500V 36A 170mΩ 200ns PLUS220SMD (IXFV...S) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) Mounting Force (PLUS220) PLUS220 TO-268 TO-247 Maximum Ratings 500 V 500 V ±30 V ±40 V 36 A 90 A 36 A 1.5 J 10 V/ns 540 W -55 ... +150 150 -55 ... +15

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