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IXFK240N15T2 - GigaMOS TrenchT2 HiperFET Power MOSFET

This page provides the datasheet information for the IXFK240N15T2, a member of the IXFX240N15T2 GigaMOS TrenchT2 HiperFET Power MOSFET family.

Features

  • z z z z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A,.

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Datasheet Details

Part number IXFK240N15T2
Manufacturer IXYS
File Size 205.22 KB
Description GigaMOS TrenchT2 HiperFET Power MOSFET
Datasheet download datasheet IXFK240N15T2 Datasheet
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Full PDF Text Transcription

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Advance Technical Information www.DataSheet4U.com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK240N15T2 IXFX240N15T2 RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 150V 240A 5.2mΩ 140ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C Maximum Ratings 150 150 ± 20 ± 30 240 160 600 120 2 1250 20 -55 ... +175 175 -55 ... +175 V V V V A A A A J W V/ns °C °C °C °C °C Nm/lb.in. N/lb.
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