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IXFK240N15T2 - GigaMOS TrenchT2 HiperFET Power MOSFET

Download the IXFK240N15T2 datasheet PDF. This datasheet also covers the IXFX240N15T2 variant, as both devices belong to the same gigamos trencht2 hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS = VDSS, VGS= 0V VGS = 10V, ID = 60A,.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFX240N15T2_IXYS.pdf) that lists specifications for multiple related part numbers.

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFK24N100F HiPerRF Power MOSFETs
IXFK24N100Q3 Power MOSFET
IXFK24N120Q2 HiPerFET Power MOSFET
IXFK24N90Q HiPerFET Power MOSFET
IXFK200N10P Polar HiPerFET Power MOSFET
IXFK210N17T GigaMOS Power MOSFET
IXFK210N17T GigaMOS Power MOSFET
IXFK21N100Q HiPerFET Power MOSFET
IXFK230N20T GigaMOS Power MOSFET
IXFK230N20T GigaMOS Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Advance Technical Information www.DataSheet4U.com GigaMOSTM TrenchT2 HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK240N15T2 IXFX240N15T2 RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 150V 240A 5.2mΩ 140ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS PD dV/dt TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C Maximum Ratings 150 150 ± 20 ± 30 240 160 600 120 2 1250 20 -55 ... +175 175 -55 ... +175 V V V V A A A A J W V/ns °C °C °C °C °C Nm/lb.in. N/lb.