IXFK32N80P - Power MOSFET

Product Overview

IXYS

Part number	IXFK32N80P
Manufacturer	IXYS
File Size	153.12 KB
Description	Power MOSFET
Datasheet	IXFK32N80P Datasheet
Additional preview pages of the IXFK32N80P datasheet.

D = Drain Tab = Drain (TAB) Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 800 V VGS(th) VDS = VGS, ID = 8 mA 3.0 5.0 V IGSS VGS = ±30 VDC, VDS = 0 ±200 nA IDSS VDS = VDSS VGS = 0 V TJ = 125° C 25 µA 1000 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 270 m Ω l International standard packages l Fast recovery diode l Unclamped Inductive Switching (UIS) rated l Lo.

📁 Similar Datasheet

Other Datasheets by IXYS

Published: Dec 26, 2014 |