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HiPerFETTM Power MOSFETs
Q-Class
IXFK 32N50Q IXFX 32N50Q
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
VDSS ID25
500 V 32 A 500 V 32 A
RDS(on)
0.16 Ω 0.16 Ω
trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL Md Weight
Symbol
VDSS VGS(th) IGSS IDSS RDS(on)
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C,
pulse width limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268
Maximum Ratings
500
V
500
V
±20
V
±30
V
32
A
120
A
32 45 1500
5
A mJ mJ V/ns
416
-55 ... + 150 150
-55 ... + 150
300
1.13/10
6 4
W
°C °C °C
°C
Nm/lb.in.
IXFK32N50Q Datasheet
