IXFK32N50Q
IXFK32N50Q is Power MOSFET manufactured by IXYS.
Hi Per FETTM Power MOSFETs
Q-Class
IXFK 32N50Q IXFX 32N50Q
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
VDSS ID25
500 V 32 A 500 V 32 A
RDS(on)
0.16 Ω 0.16 Ω trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL Md Weight
Symbol
VDSS VGS(th) IGSS IDSS RDS(on)
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268
Maximum Ratings
±20
±30
32 45 1500
A m J m J V/ns
-55 ... + 150 150
-55 ... + 150
1.13/10
6 4
°C °C °C
°C
Nm/lb.in. g g
Test Conditions
VGS = 0 V, ID = 250 u A VDS = VGS, ID = 4 m A VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1
Characteristic...
