• Part: IXFK32N60
  • Description: HiPerFET Power MOSFET
  • Category: MOSFET
  • Manufacturer: IXYS
  • Size: 171.44 KB
Download IXFK32N60 Datasheet PDF
IXYS
IXFK32N60
IXFK32N60 is HiPerFET Power MOSFET manufactured by IXYS.
IXFK 32N60 IXFK 36N60 Preliminary Data IXFN 32N60 .. IXFN 36N60 ID25 RDS(on) 0.18Ω 0.25Ω t rr 250ns 250ns VDSS Hi Per FETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A TO-264 AA (IXFK) Symbol VDSS VDGR V GS VGSM I D25 I DM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMSt = 1 min IISOL ≤ 1 m At = 1 s Mounting torque Terminal connection torque -55 ... 300 Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25 °C, Chip capability TC = 25° C, pulse width limited by TJM TC = 25 °C TC = 25 °C I S ≤ IDM, di/dt ≤ 100 A/µ s, VDD ≤ VDSS TJ ≤ 150° C, RG = 2 Ω TC = 25 °C Maximum Ratings IXFK IXFN 600 600 ±20 ±30 32N60 32 36N60 36 32N60 128 36N60 144 20 30 5 500 -55 ... 600 600 ±20 ±30 32 36 128 144 20 30 5 520 +150 150 +150 2500 3000 V V V V A A A A A m J V/ns W °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g Features - International standard packages - JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification - mini BLOC with Aluminium nitride isolation - Low RDS (on) HDMOSTM process - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated - Low package inductance - Fast intrinsic Rectifier Applications - DC-DC converters - Synchronous rectification - Battery chargers - Switched-mode and resonant-mode power supplies - DC choppers - Temperature and lighting controls - Low voltage relays Advantages Easy to mount - Space savings - High power density - G D S D (TAB) mini BLOC, SOT-227 B (IXFN) E153432 G = Gate S = Source D = Drain TAB =...