IXFK32N60
IXFK32N60 is HiPerFET Power MOSFET manufactured by IXYS.
IXFK 32N60 IXFK 36N60
Preliminary Data
IXFN 32N60 .. IXFN 36N60
ID25 RDS(on) 0.18Ω 0.25Ω t rr 250ns 250ns
VDSS
Hi Per FETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
IXFK/FN 36N60 600V 36A IXFK/FN 32N60 600V 32A
TO-264 AA (IXFK) Symbol VDSS VDGR V GS VGSM I D25 I DM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMSt = 1 min IISOL ≤ 1 m At = 1 s Mounting torque Terminal connection torque -55 ... 300 Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25 °C, Chip capability TC = 25° C, pulse width limited by TJM TC = 25 °C TC = 25 °C I S ≤ IDM, di/dt ≤ 100 A/µ s, VDD ≤ VDSS TJ ≤ 150° C, RG = 2 Ω TC = 25 °C Maximum Ratings IXFK IXFN 600 600 ±20 ±30 32N60 32 36N60 36 32N60 128 36N60 144 20 30 5 500 -55 ... 600 600 ±20 ±30 32 36 128 144 20 30 5 520 +150 150 +150 2500 3000 V V V V A A A A A m J V/ns W °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g Features
- International standard packages
- JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification
- mini BLOC with Aluminium nitride isolation
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- Fast intrinsic Rectifier Applications
- DC-DC converters
- Synchronous rectification
- Battery chargers
- Switched-mode and resonant-mode power supplies
- DC choppers
- Temperature and lighting controls
- Low voltage relays Advantages Easy to mount
- Space savings
- High power density
- G D S
D (TAB) mini BLOC, SOT-227 B (IXFN) E153432
G = Gate S = Source
D = Drain TAB =...