IXFK32N100Q3 Datasheet | IXYS

Q3-Class Hiper FETTM Power MOSFET N-Channel Enhancement Mode Fast Intrinsic Rectifier IXFK32N100Q3 IXFX32N100Q3 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TSOLD Md FC Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 30 40 TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150C TC = 25C -55 ... +150 150 -55 ... +150 V/ns C C C Maximum Lead Temperature for Soldering °C Plastic Body for 10s °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.in. N/lb. TO-264 PLUS247 10 g 6 g Symbol Test Conditions (TJ = 25C Unless Otherwise...