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IXFK44N50F - Power MOSFET

Download the IXFK44N50F datasheet PDF. This datasheet also covers the IXFX44N50F variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • l RF capable MOSFETs l Double metal process for low gate resistance l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect l Fast intrinsic rectifier.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFX44N50F-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching Single MOSFET Die IXFX 44N50F IXFK 44N50F VDSS = 500 V ID25 = 44 A RDS(on) = 120 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt P D TJ T JM Tstg T L Md Weight Symbol V DSS VGS(th) IGSS IDSS RDS(on) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 500 V 500 V ±20 V ±30 V 44 A 184 A 44 A 60 mJ 2.