Overview: HiPerRFTM Power MOSFETs
F-Class: MegaHertz Switching
Single MOSFET Die IXFX 44N50F IXFK 44N50F VDSS = 500 V ID25 = 44 A RDS(on) = 120 mΩ
trr ≤ 250 ns N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
P D
TJ T
JM
Tstg T
L
Md Weight
Symbol
V DSS
VGS(th) IGSS
IDSS
RDS(on) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264
PLUS 247 TO-264 500 V 500 V ±20 V ±30 V 44 A 184 A 44 A 60 mJ 2.5 J 10 V/ns 500 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 0.4/6 Nm/lb.in. 6g 10 g Test Conditions V = 0 V, I = 250uA GS D VDS = VGS, ID = 4mA VGS = ±20 V, VDS = 0 VDS = VDSS VGS = 0 V
VGS = 10 V, ID = 0.5 ID25 Note 1 Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max. 500 V 3.0 5.
