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Advance Technical Information
HiPerFETTM Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr
IXFK 44N55Q IXFX 44N55Q
VDSS = 550 V
ID25
= 44 A
RDS(on) = 120 mΩ
t rr
≤
250
ns
PLUS 247TM (IXFX)
Symbol
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL M
d
Weight
Symbol
VDSS VGS(th) IGSS
I DSS
RDS(on)
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264
Maximum Ratings
550
V
550
V
±20
V
±30
V
44
A
176
A
44
A
60
mJ
2.
IXFK44N55Q Datasheet
