Overview: Advance Technical Information HiPerFETTM Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode Avalanche Rated, Low Qg High dV/dt, Low trr IXFK 44N55Q IXFX 44N55Q VDSS = 550 V ID25 = 44 A RDS(on) = 120 mΩ t rr ≤ 250 ns PLUS 247TM (IXFX) Symbol
VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt
PD TJ TJM Tstg TL M
d
Weight
Symbol
VDSS VGS(th) IGSS
I DSS
RDS(on) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 Maximum Ratings 550 V 550 V ±20 V ±30 V 44 A 176 A 44 A 60 mJ 2.5 J 10 V/ns 500 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 0.4/6 Nm/lb.in. 6 g 10 g Test Conditions
VGS = 0 V, ID = 250uA VDS = VGS, ID = 4mA VGS = ±20 V, VDS = 0
VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max. 550 V 2.5 4.
