Overview: HiPerFETTM Power MOSFETs
Single MOSFET Die Avalanche Rated IXFK 48N55 IXFX 48N55 VDSS = 550 V ID25 = 48 A =RDS(on) 110 mW
trr £ 250 ns Preliminary data Symbol
VDSS V
DGR
VGS V
GSM
I
D25
IDM I
AR
EAR E
AS
dv/dt
PD TJ TJM Tstg TL M
d
Weight
Symbol
VDSS VGS(th) IGSS IDSS
RDS(on) Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MW Continuous Transient T C = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C T C = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS TJ £ 150°C, RG = 2 W TC = 25°C 1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247 TO-264 Maximum Ratings
550 V 550 V
±20 V ±30 V
48 A 192 A
44 A
60 mJ 3J
5 V/ns 560 W -55 ... +150
150 -55 ... +150 °C
°C °C 300 °C 0.9/6 Nm/lb.in. 6g 10 g Test Conditions
VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = ±20 V, VDS = 0
VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 • ID25 Note 1 Characteristic Values (T J = 25°C, unless otherwise specified) min. typ. max. 550 V 2.5 4.
