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IXFK80N65X2 - Power MOSFET

Download the IXFK80N65X2 datasheet PDF. This datasheet also covers the IXFH80N65X2 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • International Standard Packages.
  • LAovwalaRnDcSh(OeN) RanadteQd G.
  • Low Package Inductance Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH80N65X2-IXYS.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXFK80N65X2 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFK80N65X2. For precise diagrams, and layout, please refer to the original PDF.

X2-Class HiPerFETTM Power MOSFET IXFH80N65X2 IXFK80N65X2 VDSS = ID25 = RDS(on) 650V 80A 38m N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS ...

View more extracted text
nel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque TO-247 TO-264P Maximum Ratings 650 650 V V 30 V 40 V 80 A 160 A 20 A 3J 50 V/ns 890 W -55 ... +150 150 -55 ... +150 C C C 300 °C 260 °C 1.13 / 10 Nm/lb.

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