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IXFL38N100Q2 - Power MOSFET

Datasheet Summary

Features

  • Electrically isolated mounting tab Double metal process for low gate resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode.

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Datasheet Details

Part number IXFL38N100Q2
Manufacturer IXYS
File Size 185.76 KB
Description Power MOSFET
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HiPerFETTM Power MOSFET Q2-Class IXFL38N100Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL T SOLD FC VISOL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6 mm (0.063 in.) from case for 10s Plastic body for 10s Mounting force 50/60 Hz, RMS t = 1 min IISOL ≤ 1 mA t=1s Maximum Ratings 1000 V 1000 V ± 30 V ± 40 V 29 A 152 A 38 A 5 J 20 V/ns 380 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 30..120/6.7..
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