Overview: HiPerFETTM Power MOSFET Q2-Class IXFL38N100Q2 N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dV/dt
PD
TJ TJM Tstg
TL T
SOLD
FC
VISOL
Weight Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient
TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6 mm (0.063 in.) from case for 10s Plastic body for 10s
Mounting force 50/60 Hz, RMS t = 1 min IISOL ≤ 1 mA t=1s Maximum Ratings 1000 V 1000 V ± 30 V ± 40 V 29 A 152 A 38 A 5 J 20 V/ns 380 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 30..120/6.7..27 N/lbs 2500 V~ 3000 V~ 10 g Symbol
BVDSS VGS(th) IGSS IDSS
RDS(on) Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max. VGS = 0 V, ID = 1mA 1000 V VDS = VGS, ID = 8mA 3.0 5.