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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFH/IXFM6N90 IXFH/IXFM6N100
V DSS
900 V 1000 V
I
D25
6A 6A
trr £ 250 ns
R DS(on)
1.8 W 2.0 W
Symbol VDSS V
DGR
VGS VGSM ID25 IDM I
AR
EAR dv/dt
PD T
J
TJM T
stg
TL Md Weight
Symbol
VDSS
VGS(th) IGSS IDSS
RDS(on)
Test Conditions
Maximum Ratings TO-247 AD (IXFH)
TJ = 25°C to 150°C
T J
=
25°C
to
150°C;
R GS
=
1
MW
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
T C
= 25°C
TC = 25°C
IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s Mounting torque
6N90 6N100
900 1000
±20 ±30
6 24
6 18
5
V V V V A A A mJ V/ns
180 W
-55 ... +150 150
-55 ... +150
°C °C °C
300 °C
1.13/10 Nm/lb.in.
IXFM6N100 Datasheet
