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IXFT4N100Q Datasheet Power MOSFET

Manufacturer: IXYS (now Littelfuse)

Overview: HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS(on) = 1000 V = 4A = 3.0 W trr £ 250 ns Maximum Ratings 1000 1000 ±20 ±30 4 16 4 20 700 5 150 -55 to +150 150 -55 to +150 300 1.13/10 6 4 V V V V A A A mJ mJ V/ns W °C °C °C °C Nm/lb.in.

Download the IXFT4N100Q datasheet PDF. This datasheet also includes the IXFH4N100Q variant, as both parts are published together in a single manufacturer document.

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Key Features

  • IXYS advanced low Qg process.
  • Low gate charge and capacitances - easier to drive - faster switching.
  • International standard packages.
  • Low RDS (on).
  • Unclamped Inductive Switching (UIS) rated.
  • Molding epoxies meet UL 94 V-0 flammability classification Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1000 3.0 5.0 ±100 TJ = 25°C TJ = 125°C 50 1 3.0 V V nA mA mA W VDSS VGS(th) IGSS IDSS RDS(o.

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