Overview: X2-Class HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK100N65X2 IXFX100N65X2 VDSS = ID25 =
RDS(on) 650V 100A 30m TO-264P (IXFK) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD dv/dt
TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M
Continuous Transient 650 V 650 V
30 V 40 V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C 100 200
15 3.5
1040
50
-55 ... +150 150
-55 ... +150 A A
A J
W
V/ns
C C C Maximum Lead Temperature for Soldering 300 °C Plastic Body for 10s 260 °C Mounting Torque (TO-264) Mounting Force (PLUS247) 1.13/10 20..120 /4.5..27 Nm/lb.in N/lb TO-264P PLUS247 10 g 6g Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 1mA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125C RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 Characteristic Values Min. Typ. Max. 650 V
3.5 5.
