Datasheet4U Logo Datasheet4U.com

IXFX120N25P - PolarHT HiPerFET Power MOSFET

Download the IXFX120N25P datasheet PDF. This datasheet also covers the IXFK120N25P variant, as both devices belong to the same polarht hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z 1.13/10 Nm/lb. in. 10 6 g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 μA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 250 2.5 5.0 ±200 25 250 19 24 V V nA μA μA mΩ Advantages z z z Easy to mount Space savings High power.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFK120N25P_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXFX100N25 Power MOSFET IXYS Corporation
IXFX150N15 Power MOSFET IXYS Corporation
IXFX180N10 Power MOSFETs IXYS Corporation
IXFX20N120 HiPerFET Power MOSFETs IXYS Corporation
IXFX20N120P Power MOSFET IXYS Corporation

Other Datasheets by IXYS (now Littelfuse)

Part Number Description
IXFX120N25 HiPerFET Power MOSFETs
IXFX120N20 Power MOSFET
IXFX120N30T GigaMOS Power MOSFET
IXFX120N30T GigaMOS Power MOSFET
IXFX120N65X2 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PolarHTTM HiPerFET Power MOSFET N-Channel Enhancement Mode IXFK 120N25P IXFX 120N25P VDSS = ID25 = RDS(on) = trr < www.DataSheet4U.com 250 V 120 A 24 mΩ 200 ns Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω TC = 25°C Maximum Ratings 250 250 ± 20 ± 30 120 75 300 60 60 2.5 10 700 -55 ... +175 175 -55 ... +150 V V V V TO-264(SP) (IXFK) G A A A A mJ J V/ns W °C °C °C °C D (TAB) S PLUS247 (IXFX) G = Gate S = Source (TAB) D = Drain TAB = Drain 1.6 mm (0.062 in.