IXFX120N20 Overview
Key Features
- International standard packages
- Low RDS (on) HDMOSTM process
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low package inductance
- easy to drive and to protect
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| AP9563GH | Advanced Power Electronics Corp | P-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| FCPF360N65S3R0L | onsemi | N-Channel MOSFET |
| A2SHB | HAOHAI | N-Channel MOSFET |