Overview: HiPerFETTM Power MOSFETs
Single MOSFET Die
Preliminary data sheet IXFX 120N20 IXFK 120N20 V= DSS
ID25 = = RDS(on) 200 V 120 A
17 mΩ trr ≤ 250 ns Symbol
VDSS VDGR
VGS VGSM
ID25 ID104 IDM IAR
EAR EAS dv/dt
PD TJ T
JM
Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous Transient TC = 25°C (MOSFET chip capability) TC = 104°C (External lead capability) TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS T J ≤ 150°C, R G = 2 Ω TC = 25°C 1.6 mm (0.063 in.) from case for 10 s
Mounting torque TO-264
PLUS 247 TO-264 Maximum Ratings 200 V 200 V ±20 V ±30 V 120 A 76 A 480 A 120 A 64 mJ 3 J 15 V/ns 560 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 0.9/6 Nm/b.in.
