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IXGB200N60B3 - Medium speed low Vsat PT IGBT

Datasheet Summary

Features

  • z NPT IGBT technology z Low switching losses z Low tail current z No latch up z Short circuit capability z Positive temperature coefficient for easy paralleling z MOS input, voltage controlled z Optional ultra fast diode z International standard package Advantages z Space savings z High power density power supplies z Low gate charge results in simple drive requirement.

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Datasheet Details

Part number IXGB200N60B3
Manufacturer IXYS
File Size 204.69 KB
Description Medium speed low Vsat PT IGBT
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GenX3TM 600V IGBT Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGB200N60B3 VCES = 600V IC110 = 200A VCE(sat) ≤ 1.5V tfi(typ) = 183ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C (chip capability) TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 1Ω Clamped inductive load @ VCE ≤ 600V TC = 25°C Maximum lead temperature for soldering Plastic body for 10s Mounting force Maximum Ratings 600 V 600 V ±20 V ±30 V 75 A 200 A 600 A ICM = 300 A 1250 -55 ... +150 150 -55 ... +150 300 260 30..120/6.7..27 10 W °C °C °C °C °C N/lb.
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