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IXGC 16N60C2 HiPerFASTTM IGBT IXGC 16N60C2D1 C2-Class High Speed IGBT in ISOPLUS220TM Case Electrically Isolated Back Surface
Preliminary Data Sheet
D1
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VCES IC25 VCE(sat)
tfi(typ)
= 600 V = 20 A = 3.0 V = 35 ns
Symbol VCES VCGR VGES VGEM IC25 IC110 ID110 ICM SSOA (RBSOA) PC TJ TJM Tstg FC VISOL
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 110°C (IXGC16N60C2D1 diode) TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 22 Ω Clamped inductive load TC = 25°C
Maximum Ratings 600 600 ± 20 ± 30 20 8 10 100 ICM = 32 @0.8 VCES 63 -55 ... +150 150 -55 ... +150 V V V V A A A A A
ISOPLUS 220TM (IXGC) E153432
G
C
E
Isolated back surface*
G = Gate E = Emitter
C = Collector
Features W °C °C °C N/lb.
IXGC16N60C2D1 Datasheet
