IXGH25N120 Description
+150 °C 1.13/10 Nm/lb.in. 6 g 300 °C G C E G = Gate, E = Emitter, C = Collector, TAB = Collector.
IXGH25N120 Key Features
- for low on-state conduction losses l MOS Gate turn-on
- drive simplicity
- Part: IXGH25N120
- Manufacturer: IXYS
- Size: 45.89 KB
Related IXYS Datasheets
| Part Number | Description |
|---|---|
| IXGH25N120A | High speed IGBT |
| IXGH25N160 | High Voltage IGBT |
| IXGH25N250 | High Voltage IGBT |
| IXGH20N100 | IGBT |
| IXGH20N120B | High Voltage IGBT |