IXGH25N120 Overview
+150 °C 1.13/10 Nm/lb.in. 6 g 300 °C G C E G = Gate, E = Emitter, C = Collector, TAB = Collector.
IXGH25N120 Key Features
- for low on-state conduction losses l MOS Gate turn-on
- drive simplicity
Datasheet Details
| Part number | IXGH25N120 |
|---|---|
| Datasheet | IXGH25N120-IXYS.pdf |
| File Size | 45.89 KB |
| Manufacturer | IXYS (now Littelfuse) |
| Description | High speed IGBT |
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