IXGH25N120A Overview
+150 °C 1.13/10 Nm/lb.in. 6 g 300 °C G C E G = Gate, E = Emitter, C = Collector, TAB = Collector.
IXGH25N120A Key Features
- for low on-state conduction losses l MOS Gate turn-on
- drive simplicity
Datasheet Details
| Part number | IXGH25N120A |
|---|---|
| Datasheet | IXGH25N120A IXGH25N120 Datasheet (PDF) |
| File Size | 45.89 KB |
| Manufacturer | IXYS (now Littelfuse) |
| Description | High speed IGBT |
|
|